In Situ Superconducting MgB2 Films Grown by Co-evaporation Technique

dc.contributor.authorMalisa, Anayesu B.
dc.date.accessioned2016-09-21T13:54:54Z
dc.date.available2016-09-21T13:54:54Z
dc.date.issued2005
dc.descriptionFull text can be accessed at http://onlinelibrary.wiley.com/doi/10.1002/pssa.200521146/fullen_US
dc.description.abstractSuperconducting thin films of MgB2 were grown in situ by co-evaporation of magnesium and boron on MgO (111), SiC (0001) and Al2O3 (0001) substrates at ∼300 °C. The films showed transitions to the superconducting state in the temperature range of 33–37 K. The widths of the superconducting transitions were less than 1 K. The films exhibited growth in the c-axis and absence of other phases. Optimization of the growth parameters enabled films with smooth surface morphology and root-mean-square (RMS) roughness of 2 nm to be grown. The low RMS roughness value indicates that the technique can be used to grow MgB2 films useful for junctions and multilayer devices. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)en_US
dc.identifier.citationMalisa, A., 2005. In situ superconducting MgB2 films grown by co‐evaporation technique. physica status solidi (a), 202(13), pp.R139-R141.en_US
dc.identifier.doi10.1002/pssa.200521146
dc.identifier.urihttp://hdl.handle.net/20.500.11810/3992
dc.language.isoenen_US
dc.titleIn Situ Superconducting MgB2 Films Grown by Co-evaporation Techniqueen_US
dc.typeJournal Articleen_US
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